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| VN1506 VN1509 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS 60V 90V RDS(ON) (max) 3.0 3.0 ID(ON) (min) 2.0A 2.0A Order Number / Package Die VN01506NW VN1509NW MIL visual screening available. Features t Free from secondary breakdown t Low power drive requirement t Ease of paralleling t Low CISS and fast switching speeds t Excellent thermal stability t Integral Source-Drain diode t High input impedance and high gain t Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications t Motor controls t Converters t Amplifiers t Switches t Power supply circuits t Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS 20V -55C to +150C 300C 03/26/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. VN1506/VN1509 Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS Parameter Drain-to-Source Breakdown Voltage VN1509 VN1506 VGS(th) VGS(th) IGSS IDSS Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 90 V 60 0.8 -3.8 2.4 -5.5 100 1 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 0.5 2.0 1.0 2.5 3.0 2.5 0.70 450 55 20 5 3 5 6 5 1.2 400 65 25 8 5 8 9 8 1.8 V ns ns VDD = 25V ID = 1A RGEN = 25 VGS = 0V, ISD =1.0A VGS = 0V, ISD =1.0A pF 5.0 3.0 1 A V mV/C nA VGS = VDS, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 250mA VGS = 10V, ID = 1A VGS = 10V, ID = 1A VDS = 25V, ID = 0.5A VGS = 0V, VDS = 25V f = 1 MHz VGS = 0V, ID = 1mA Typ Max Unit Conditions A %/C m Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 03/26/02 (c)2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com |
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